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| SP4T PIN Diode with Integrated Bias Network V 2.00 MA4SW410B-1 Features n n n n Outline Drawing Broad Bandwith Specified from 2 to 18 GHz Integrated D.C. Bias Network Exceptional Isolation to Loss Ratio Rugged, Fully Monolithic, Glass Encapsulated Construction Description The MA4SW410B-1 device is a SP4T Series-Shunt Broad Band Switch with an Integrated Bias Network utilizing M/A-COM's HMICTM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in a low loss, low dispersion glass. This hybrid combination of Silicon and Glass gives HMIC Switches exceptional low loss and remarkable high isolation through Ku Band frequencies. Applications These High Performance Switches are suitable for use in Multi-Band ECM, Radar, and Instrumentation Control Circuits where High Isolation to Insertion Loss Ratios are Required. With a Standard +5 V/-5 V, TTL Controlled PIN Diode Driver, 80 nS Switching Speeds are Achieved. Nominal Die Dimensions Inches Millimeters Dim A B Min .085 .106 .048 .007 .033 .057 0.77 0.46 .024 Max .058 .110 .052 .011 .034 .061 .081 .050 .028 Min 2.17 2.69 1.22 0.17 0.85 1.46 1.96 1.18 0.61 Max 2.27 2.79 1.32 0.27 0.86 1.56 2.06 1.28 0.71 Absolute Maximum Ratings 1 C D E F G H I RF Bond Pads DC Bond Pads Thickness @ TA = +25 C (unless otherwise specified) Parameter Operating Temperature Storage Temperature RF C.W. Incident Power (+/-20 mA) DC Bias Current Value -65 C to +125 C 65 C to +150 C + 30 dBm +/-40 mA .007 X .005 REF. .005 X .005 REF. 005 REF. .170 X .120 REF. .125 X .125 REF. .125 REF. 1. Exceeding any of these values may result in permanent damage SP4T PIN Diode Switch with Integrated Bias Network MA4SW410B-1 V 2.00 Electrical Specifications @ TA = + 25 C, +/- 10 mA Bias Current (On-Wafer Measurements) Parameters Insertion Loss Frequency 6 GHz 12 GHz 18 GHz Minimum 40 35 30 - Nominal 0.80 1.00 1.40 50 40 35 10 15 10 80 Maximum 1.0 1.2 1.6 - Units dB dB dB dB dB dB dB dB dB nS Isolation 6 GHz 12 GHz 18 GHz Input Return Loss 6 GHz 12 GHz 18 GHz Switching Speed1 - 1. Typical Switching Speed measured from 10 % to 90 % of detected RF Voltage driven by TTL compatible drivers using RC Output Spiking Network, where R = 50 - 200 , C = 390 - 560 pF. Driver Connections for the MA4SW410B-1 Operation of the MA4SW Series of PIN Switches is achieved by the Simultaneous Application of Negative DC Current to the Low Loss Port and Positive DC current to the Remaining Isolated Switching Ports per the Driver Connections Table. The control currents should be supplied by constant current sources. For Insertion Loss, -10 mA bias results in approximately -2 V, and for Isolation ,+ 10 mA yields approximately +0.9 V at the respective bias nodes. The Backside Area of the Die is the RF and DC Return Ground Plane. Driver Connections for the MA4SW410B-1 Control Level (DC Current) at Port B2 -10 mA +10 mA +10 mA +10 mA B3 +10 mA -10 mA +10 mA +10 mA B4 +10 mA +10 mA -10 mA +10 mA B5 +10 mA +10 mA +10 mA -10 mA Condition of RF Output J1-J2 Low Loss Isolation Isolation Isolation Condition of RF Output J1-J3 Isolation Low Loss Isolation Isolation Condition of RF Output J1-J4 Isolation Isolation Low Loss Isolation Condition of RF Output J1-J5 Isolation Isolation Isolation Low Loss 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 SP4T PIN Diode Switch with Integrated Bias Network Assembly Considerations The following precautions should be observed for successful assembly of the die. MA4SW410B-1 V 2.00 Mounting These chips have TiPtAu back metal. They can be die mounted with a gold-tin eutectic solder preform or electrically conductive epoxy. Mounting surface must be clean and flat. Cleanliness These chips should be handled in a clean environment. Do not attempt to clean die after installation. Eutectic Die Attachment An 80/20 Gold-Tin eutectic solder preform is recommended with a work surface temperature of 255 C and a tool tip temperature of 265 C. When hot gas is applied, the tool tip temperature should be 290 C. The chip should not be exposed to temperatures greater than 320 C for more than 20 seconds. No more than three seconds should be required for the attachment. Electro-Static Sensitivity The MA4SW410B-1 Series PIN Diode Switch is ESD, Class 1 sensitive. The proper ESD handling procedures should be used. Wire Bonding Thermosonic wedge wire bonding using 1/4 x 3 mil sq. ribbon or Ball Bonding using 1 mil diameter gold wire is recommended. A stage temperature of 150 C and a force of 18 to 22 grams should be used. Ultrasonic energy should be adjusted to the minimum required. RF bonds should be as short as possible. Electrically Conductive Epoxy Die Attachment Assembly should be preheated to 125-150 C. A Controlled thickness of 2 mils is recommended for best electrical and thermal conductivity. A thin epoxy fillet should be visible around the perimeter of the chip after placement. Cure epoxy per manufacturer's schedule. MA4SW410B-1 Topology 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 SP4T PIN Diode Switch with Integrated Bias Network Microwave Performance MA4SW410B-1 Typical Insertion Loss 0 MA4SW410B-1 V 2.00 -1 -2 dB -3 -4 -5 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (Ghz) J1 to J2 J1 to J3 J1 to J4 J1 to J5 MA4SW410B-1 Typical Isolation 0 -5 -10 -15 -20 -25 -30 dB -35 -40 -45 -50 -55 -60 -65 -70 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) J1 to J2 J1 to J3 J1 to J4 J1 to J5 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 SP4T PIN Diode Switch with Integrated Bias Network Microwave Performance MA4SW410B-1 Typical Return Loss 0 -5 -10 MA4SW410B-1 V 2.00 dB -15 -20 -25 -30 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) Input RL J2 RL J3 RL J4 RL J5 RL 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 SP4T PIN Diode Switch with Integrated Bias Network MA4SW410B-1 Schematic MA4SW410B-1 V 2.00 J1 ( Common Port ) DC Bias J2 J5 J3 J4 6 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 |
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